Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN
Indium Tin Oxide films were deposited directly on p-type Gallium Nitride film using the electron beam deposition method at different substrate temperatures from 25 degrees C to 550 degrees C. The structural, optical and Hall measurements represent a direct correlation of ITO properties with the subs...
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Published: |
Elsevier
2021
|
| Subjects: | |
| Online Access: | http://eprints.um.edu.my/34301/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|