Methodology for thermal-mechanical modeling of damage and failure processes in through-silicon-vias
The reported failure of the Cu-filled via adjacent to the SiO2 liner of a TSV interconnect under thermal-mechanical stressing calls for a thorough quantitative investigation. In this respect, this paper presents a FE-based methodology to quantify the mechanics of deformation and failure processes of...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Published: |
2018
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/81882/ http://dx.doi.org/10.1109/IMPACT.2017.8255912 |
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