Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane
The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good...
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| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2006
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/7630/1/Hashim_Abdul_Manaf_2006_Low_Temperature_Heteroepitaxial_Growth_3C-SiC_Si.pdf http://eprints.utm.my/id/eprint/7630/ http://dx.doi.org/10.1109/SMELEC.2006.380713 |
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