Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor
The ballistic saturation velocity in a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) is revealed to be limited to the Fermi velocity in a degenerately induced channel appropriate for the quasi-two-dimensional nature of the inverted channel. The saturation point drain velocity...
保存先:
| 主要な著者: | , , , |
|---|---|
| フォーマット: | 論文 |
| 出版事項: |
American Institute of Physics
2007
|
| 主題: | |
| オンライン･アクセス: | http://eprints.utm.my/id/eprint/7500/ http://dx.doi.org/10.1063/1.2780058 |
| タグ: |
タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
|