Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor
The ballistic saturation velocity in a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) is revealed to be limited to the Fermi velocity in a degenerately induced channel appropriate for the quasi-two-dimensional nature of the inverted channel. The saturation point drain velocity...
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| Main Authors: | , , , |
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| 格式: | Article |
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American Institute of Physics
2007
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| 主题: | |
| 在线阅读: | http://eprints.utm.my/id/eprint/7500/ http://dx.doi.org/10.1063/1.2780058 |
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