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Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor

The ballistic saturation velocity in a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) is revealed to be limited to the Fermi velocity in a degenerately induced channel appropriate for the quasi-two-dimensional nature of the inverted channel. The saturation point drain velocity...

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Main Authors: Arora, Vijay K., Tan, Michael L. P., Saad, Ismail, Ismail, Razali
Format: Article
Published: American Institute of Physics 2007
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/7500/
http://dx.doi.org/10.1063/1.2780058
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spelling my.utm.75002017-10-11T04:43:55Z http://eprints.utm.my/id/eprint/7500/ Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor Arora, Vijay K. Tan, Michael L. P. Saad, Ismail Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering The ballistic saturation velocity in a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) is revealed to be limited to the Fermi velocity in a degenerately induced channel appropriate for the quasi-two-dimensional nature of the inverted channel. The saturation point drain velocity is shown to rise with the increasing drain voltage approaching the intrinsic Fermi velocity, giving the equivalent of channel-length modulation. Quantum confinement effect degrades the channel mobility to the confining gate electric field as well as increases the effective thickness of the gate oxide. When the theory developed is applied to an 80 nm MOSFET, excellent agreement to the experimental data is obtained. American Institute of Physics 2007-09-06 Article PeerReviewed Arora, Vijay K. and Tan, Michael L. P. and Saad, Ismail and Ismail, Razali (2007) Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor. Applied Physics Letters, 91 (10). ISSN 1077-3118 http://dx.doi.org/10.1063/1.2780058 10.1063/1.2780058
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Arora, Vijay K.
Tan, Michael L. P.
Saad, Ismail
Ismail, Razali
Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor
description The ballistic saturation velocity in a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) is revealed to be limited to the Fermi velocity in a degenerately induced channel appropriate for the quasi-two-dimensional nature of the inverted channel. The saturation point drain velocity is shown to rise with the increasing drain voltage approaching the intrinsic Fermi velocity, giving the equivalent of channel-length modulation. Quantum confinement effect degrades the channel mobility to the confining gate electric field as well as increases the effective thickness of the gate oxide. When the theory developed is applied to an 80 nm MOSFET, excellent agreement to the experimental data is obtained.
format Article
author Arora, Vijay K.
Tan, Michael L. P.
Saad, Ismail
Ismail, Razali
author_facet Arora, Vijay K.
Tan, Michael L. P.
Saad, Ismail
Ismail, Razali
author_sort Arora, Vijay K.
title Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor
title_short Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor
title_full Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor
title_fullStr Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor
title_full_unstemmed Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor
title_sort ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor
publisher American Institute of Physics
publishDate 2007
url http://eprints.utm.my/id/eprint/7500/
http://dx.doi.org/10.1063/1.2780058
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score 13.211869

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