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Design and simulation of a high performance lateral BJTs on TFSOI

Lateral BJT's have received renewed interest with the advent of BiCMOS and Silicon on Insulator (SOI) technology. It's been reported in [1] that a 67 GHz fmax novel lateral BJT's on TFSOI has been fabricated with a simplified process. This paper presents an investigation of this high...

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書誌詳細
主要な著者:	Saad, Ismail, Ismail, Razali
フォーマット:	Conference or Workshop Item
言語:	English
出版事項:	2006
主題:	TK Electrical engineering. Electronics Nuclear engineering
オンライン･アクセス:	http://eprints.utm.my/id/eprint/7499/1/Razali_Ismail_2006_Design_and_Simulation_of_a_High.pdf http://eprints.utm.my/id/eprint/7499/ http://dx.doi.org/10.1109/SMELEC.2006.380692
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