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Design and simulation of a high performance lateral BJTs on TFSOI

Lateral BJT's have received renewed interest with the advent of BiCMOS and Silicon on Insulator (SOI) technology. It's been reported in [1] that a 67 GHz fmax novel lateral BJT's on TFSOI has been fabricated with a simplified process. This paper presents an investigation of this high...

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Main Authors: Saad, Ismail, Ismail, Razali
Format: Conference or Workshop Item
Language:English
Published: 2006
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/7499/1/Razali_Ismail_2006_Design_and_Simulation_of_a_High.pdf
http://eprints.utm.my/id/eprint/7499/
http://dx.doi.org/10.1109/SMELEC.2006.380692
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spelling my.utm.74992010-06-01T15:52:53Z http://eprints.utm.my/id/eprint/7499/ Design and simulation of a high performance lateral BJTs on TFSOI Saad, Ismail Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering Lateral BJT's have received renewed interest with the advent of BiCMOS and Silicon on Insulator (SOI) technology. It's been reported in [1] that a 67 GHz fmax novel lateral BJT's on TFSOI has been fabricated with a simplified process. This paper presents an investigation of this high performance transistor by using 2D process and device numerical simulation. Accurate geometrical structure and reasonably good doping profiles with a simple fabrication process are successfully achieved in the process simulation. However, a careful attention is required to define the mesh for the device to obtain an accurate measurement of device characteristics. With a base, low-doped collector, emitter and high-doped collector concentrations of 3 times 1017 cm-3, 1.0 times 1017 cm-3, 5 times 1020 cm-3 and 3 times 1020 cm-3 respectively, a variation of 0.1-0.13 mum base width is observed. I-V and frequency performance of these transistors are simulated and analyzed. Y-parameter measurement at frequency 10 MHz - 1000 GHz shows a 21 GHz fmax was successfully achieved at VBE=0.7 V, VCE=2.0 V and ICE=6.0 muA. 2006-12 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/7499/1/Razali_Ismail_2006_Design_and_Simulation_of_a_High.pdf Saad, Ismail and Ismail, Razali (2006) Design and simulation of a high performance lateral BJTs on TFSOI. In: Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference, 29 Oct 2006-1 Dec 2006, Kuala Lumpur, Malaysia. http://dx.doi.org/10.1109/SMELEC.2006.380692
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Saad, Ismail
Ismail, Razali
Design and simulation of a high performance lateral BJTs on TFSOI
description Lateral BJT's have received renewed interest with the advent of BiCMOS and Silicon on Insulator (SOI) technology. It's been reported in [1] that a 67 GHz fmax novel lateral BJT's on TFSOI has been fabricated with a simplified process. This paper presents an investigation of this high performance transistor by using 2D process and device numerical simulation. Accurate geometrical structure and reasonably good doping profiles with a simple fabrication process are successfully achieved in the process simulation. However, a careful attention is required to define the mesh for the device to obtain an accurate measurement of device characteristics. With a base, low-doped collector, emitter and high-doped collector concentrations of 3 times 1017 cm-3, 1.0 times 1017 cm-3, 5 times 1020 cm-3 and 3 times 1020 cm-3 respectively, a variation of 0.1-0.13 mum base width is observed. I-V and frequency performance of these transistors are simulated and analyzed. Y-parameter measurement at frequency 10 MHz - 1000 GHz shows a 21 GHz fmax was successfully achieved at VBE=0.7 V, VCE=2.0 V and ICE=6.0 muA.
format Conference or Workshop Item
author Saad, Ismail
Ismail, Razali
author_facet Saad, Ismail
Ismail, Razali
author_sort Saad, Ismail
title Design and simulation of a high performance lateral BJTs on TFSOI
title_short Design and simulation of a high performance lateral BJTs on TFSOI
title_full Design and simulation of a high performance lateral BJTs on TFSOI
title_fullStr Design and simulation of a high performance lateral BJTs on TFSOI
title_full_unstemmed Design and simulation of a high performance lateral BJTs on TFSOI
title_sort design and simulation of a high performance lateral bjts on tfsoi
publishDate 2006
url http://eprints.utm.my/id/eprint/7499/1/Razali_Ismail_2006_Design_and_Simulation_of_a_High.pdf
http://eprints.utm.my/id/eprint/7499/
http://dx.doi.org/10.1109/SMELEC.2006.380692
_version_ 1643644784503422976
score 13.211869

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