Design and simulation of a high performance lateral BJTs on TFSOI
Lateral BJT's have received renewed interest with the advent of BiCMOS and Silicon on Insulator (SOI) technology. It's been reported in [1] that a 67 GHz fmax novel lateral BJT's on TFSOI has been fabricated with a simplified process. This paper presents an investigation of this high...
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| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2006
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/7499/1/Razali_Ismail_2006_Design_and_Simulation_of_a_High.pdf http://eprints.utm.my/id/eprint/7499/ http://dx.doi.org/10.1109/SMELEC.2006.380692 |
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| Summary: | Lateral BJT's have received renewed interest with the advent of BiCMOS and Silicon on Insulator (SOI) technology. It's been reported in [1] that a 67 GHz fmax novel lateral BJT's on TFSOI has been fabricated with a simplified process. This paper presents an investigation of this high performance transistor by using 2D process and device numerical simulation. Accurate geometrical structure and reasonably good doping profiles with a simple fabrication process are successfully achieved in the process simulation. However, a careful attention is required to define the mesh for the device to obtain an accurate measurement of device characteristics. With a base, low-doped collector, emitter and high-doped collector concentrations of 3 times 1017 cm-3, 1.0 times 1017 cm-3, 5 times 1020 cm-3 and 3 times 1020 cm-3 respectively, a variation of 0.1-0.13 mum base width is observed. I-V and frequency performance of these transistors are simulated and analyzed. Y-parameter measurement at frequency 10 MHz - 1000 GHz shows a 21 GHz fmax was successfully achieved at VBE=0.7 V, VCE=2.0 V and ICE=6.0 muA. |
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