Gas phase diagnostics during silicon carbide films deposition using very high frequency - plasma enhanced chemical vapor deposition
In-situ Optical Emission Spectroscopy was used as diagnostics tool to monitor deposition process of Silicon Carbide (SiC) film using Very High Frequency - Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD) method. The VHF-PECVD operated at plasma excitation frequency of 150MHz and 25 W of RF powe...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Published: |
2015
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/59286/ http://dx.doi.org/10.1063/1.4915240 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!