Staff View: Gas phase diagnostics during silicon carbide films deposition using very high frequency - plasma enhanced chemical vapor deposition

Gas phase diagnostics during silicon carbide films deposition using very high frequency - plasma enhanced chemical vapor deposition

In-situ Optical Emission Spectroscopy was used as diagnostics tool to monitor deposition process of Silicon Carbide (SiC) film using Very High Frequency - Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD) method. The VHF-PECVD operated at plasma excitation frequency of 150MHz and 25 W of RF powe...

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Main Authors:	Mustapha, N., Omar, M. F., Ismail, A. K., Zainal, J., Raja Ibrahim, R. K.
Format:	Article
Published:	2015
Subjects:	QC Physics
Online Access:	http://eprints.utm.my/id/eprint/59286/ http://dx.doi.org/10.1063/1.4915240
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id	my.utm.59286
record_format	eprints
spelling	my.utm.592862021-11-08T06:36:59Z http://eprints.utm.my/id/eprint/59286/ Gas phase diagnostics during silicon carbide films deposition using very high frequency - plasma enhanced chemical vapor deposition Mustapha, N. Omar, M. F. Ismail, A. K. Zainal, J. Raja Ibrahim, R. K. QC Physics In-situ Optical Emission Spectroscopy was used as diagnostics tool to monitor deposition process of Silicon Carbide (SiC) film using Very High Frequency - Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD) method. The VHF-PECVD operated at plasma excitation frequency of 150MHz and 25 W of RF power was applied to generate plasma. A mixture of silane, SiH 4 and methane, CH 4 was used as a precursor to deposit SiC. Ar was used as a carrier gas and H 2 was added to enhance the formation of SiC. The intensities of SiH∗ (414 nm), CH∗ (431 nm), H α (656 nm) and H β (486 nm) lines were monitored during the deposition process at different deposition parameters. The results indicate that the substrate temperature, methane flow rate, and hydrogen flow rate affect the emission intensities for all species inside the plasma. 2015 Article PeerReviewed Mustapha, N. and Omar, M. F. and Ismail, A. K. and Zainal, J. and Raja Ibrahim, R. K. (2015) Gas phase diagnostics during silicon carbide films deposition using very high frequency - plasma enhanced chemical vapor deposition. NATIONAL PHYSICS CONFERENCE 2014 (PERFIK 2014), 1657 . ISSN 0094-243X http://dx.doi.org/10.1063/1.4915240 DOI: 10.1063/1.4915240
institution	Universiti Teknologi Malaysia
building	UTM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Teknologi Malaysia
content_source	UTM Institutional Repository
url_provider	http://eprints.utm.my/
topic	QC Physics
spellingShingle	QC Physics Mustapha, N. Omar, M. F. Ismail, A. K. Zainal, J. Raja Ibrahim, R. K. Gas phase diagnostics during silicon carbide films deposition using very high frequency - plasma enhanced chemical vapor deposition
description	In-situ Optical Emission Spectroscopy was used as diagnostics tool to monitor deposition process of Silicon Carbide (SiC) film using Very High Frequency - Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD) method. The VHF-PECVD operated at plasma excitation frequency of 150MHz and 25 W of RF power was applied to generate plasma. A mixture of silane, SiH 4 and methane, CH 4 was used as a precursor to deposit SiC. Ar was used as a carrier gas and H 2 was added to enhance the formation of SiC. The intensities of SiH∗ (414 nm), CH∗ (431 nm), H α (656 nm) and H β (486 nm) lines were monitored during the deposition process at different deposition parameters. The results indicate that the substrate temperature, methane flow rate, and hydrogen flow rate affect the emission intensities for all species inside the plasma.
format	Article
author	Mustapha, N. Omar, M. F. Ismail, A. K. Zainal, J. Raja Ibrahim, R. K.
author_facet	Mustapha, N. Omar, M. F. Ismail, A. K. Zainal, J. Raja Ibrahim, R. K.
author_sort	Mustapha, N.
title	Gas phase diagnostics during silicon carbide films deposition using very high frequency - plasma enhanced chemical vapor deposition
title_short	Gas phase diagnostics during silicon carbide films deposition using very high frequency - plasma enhanced chemical vapor deposition
title_full	Gas phase diagnostics during silicon carbide films deposition using very high frequency - plasma enhanced chemical vapor deposition
title_fullStr	Gas phase diagnostics during silicon carbide films deposition using very high frequency - plasma enhanced chemical vapor deposition
title_full_unstemmed	Gas phase diagnostics during silicon carbide films deposition using very high frequency - plasma enhanced chemical vapor deposition
title_sort	gas phase diagnostics during silicon carbide films deposition using very high frequency - plasma enhanced chemical vapor deposition
publishDate	2015
url	http://eprints.utm.my/id/eprint/59286/ http://dx.doi.org/10.1063/1.4915240
_version_	1717093385406251008
score	13.211869

Gas phase diagnostics during silicon carbide films deposition using very high frequency - plasma enhanced chemical vapor deposition

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