Gas phase diagnostics during silicon carbide films deposition using very high frequency - plasma enhanced chemical vapor deposition
In-situ Optical Emission Spectroscopy was used as diagnostics tool to monitor deposition process of Silicon Carbide (SiC) film using Very High Frequency - Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD) method. The VHF-PECVD operated at plasma excitation frequency of 150MHz and 25 W of RF powe...
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| Main Authors: | , , , , |
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| 格式: | Article |
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2015
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| 在線閱讀: | http://eprints.utm.my/id/eprint/59286/ http://dx.doi.org/10.1063/1.4915240 |
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