صورة الغلاف

Gas phase diagnostics during silicon carbide films deposition using very high frequency - plasma enhanced chemical vapor deposition

In-situ Optical Emission Spectroscopy was used as diagnostics tool to monitor deposition process of Silicon Carbide (SiC) film using Very High Frequency - Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD) method. The VHF-PECVD operated at plasma excitation frequency of 150MHz and 25 W of RF powe...

وصف كامل

محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Mustapha, N., Omar, M. F., Ismail, A. K., Zainal, J., Raja Ibrahim, R. K.
التنسيق:	مقال
منشور في:	2015
الموضوعات:	QC Physics
الوصول للمادة أونلاين:	http://eprints.utm.my/id/eprint/59286/ http://dx.doi.org/10.1063/1.4915240
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

مواد مشابهة

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