The drift response to the applied electric field in an InGaAs quantum-well nanostructure
InGaAs, or indium gallium arsenide, is an alloy of gallium arsenide and indium arsenide. In a more general sense, it belongs to the InGaAsP quaternary system that consists of alloys of indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), and gallium phosphide (GaP). As gallium an...
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| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2007
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/14519/ |
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