Holdings: Deriving the absorption coefficients of lattice mismatched InGaAs using genetic algorithm

Deriving the absorption coefficients of lattice mismatched InGaAs using genetic algorithm

Lattice-mismatched InGaAs has appeared to be emerging semiconductor materials for sensors and photovoltaic applications. The absorption coefficients of the materials are crucial in designing high-performance semiconductor devices. Nevertheless, the absorption coefficient of lattice-mismatched InGaAs...

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Bibliographic Details
Main Authors:	Lee H.J., Ali Gamel M.M., Ker P.J., Jamaludin M.Z., Wong Y.H., Yap K.S., Willmott J.R., Hobbs M.J., David J.P.R., Tan C.H.
Other Authors:	57190622221
Format:	Article
Published:	Elsevier Ltd 2024
Subjects:	Absorption Algorithm Coefficient Genetic InGaAs Lattice-mismatched Extraction Gallium alloys Genetic algorithms Indium alloys Infrared radiation Iterative methods Semiconducting indium Semiconducting indium gallium arsenide Semiconductor alloys Semiconductor devices Absorption coefficients High-performance semiconductors Photocurrent measurement Photovoltaic applications Sensor applications Structure design Structure materials Energy gap
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Deriving the absorption coefficients of lattice mismatched InGaAs using genetic algorithm

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