Large signal model of heterojunction bipolar transistor InP/InGaAs as an optoelectronic mixer

A large-signal model of InP/InGaAs single Heterojunction Bipolar Transistor (HBT) has been developed considering spectral performance and mixing. This model is based on Gummel Poon BJT model. HBT InP/InGaAs has been modeled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT propose...

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Bibliographic Details
Main Authors: Shaharuddin, Nur Amirah, Idrus, Sevia Mahdaliza, Isaak, Suhaila, A. Mohamed, Norliza, Yusni, N. A. A.
Format: Article
Language:English
Published: Penerbit UTM 2014
Subjects:
Online Access:http://eprints.utm.my/id/eprint/53301/1/SuhailaIsaak2014_Largesignalmodelofheterojunction.pdf
http://eprints.utm.my/id/eprint/53301/
http://dx.doi.org/10.11113/jt.v67.2761
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