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Characterization of electrostatic discharge threshold voltage of phase-shift mask reticle

A reticle is a stencil used in lithography process for forming integrated circuit (IC) on silicon substrate. It consists of a thin (100 nm) coating of masking metallic patterned (features) with critical dimension (CD) of nanometers on a thicker quartz substrate. The features can be damaged by electr...

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Main Authors: Razman, Harriman, Awang Md Isa, Azmi, Suaidi, Mohamad Kadim, Chik, Mohd Azizi
Format: Article
Language:English
Published: Institute Of Advanced Engineering And Science (IAES) 2022
Online Access:http://eprints.utem.edu.my/id/eprint/26201/2/24876-50758-1-PB.PDF
http://eprints.utem.edu.my/id/eprint/26201/
https://ijece.iaescore.com/index.php/IJECE/article/view/24876/15469
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spelling my.utem.eprints.262012023-02-23T11:39:47Z http://eprints.utem.edu.my/id/eprint/26201/ Characterization of electrostatic discharge threshold voltage of phase-shift mask reticle Razman, Harriman Awang Md Isa, Azmi Suaidi, Mohamad Kadim Chik, Mohd Azizi A reticle is a stencil used in lithography process for forming integrated circuit (IC) on silicon substrate. It consists of a thin (100 nm) coating of masking metallic patterned (features) with critical dimension (CD) of nanometers on a thicker quartz substrate. The features can be damaged by electrostatic discharge (ESD) when exposed to the environment electrostatic charge and caused deformed IC and eventually device difunctional. Semiconductor equipment materials industry (SEMI) standard established the allowable electrostatic charge on reticle based on the characterization of ESD threshold voltage on binary reticle. However, there is another type of reticle which is phase-shift mask (PSM), has not been characterized for its ESD threshold voltage. A direct current (DC) voltage is applied directly to the structures with CD of 80 nm, 110 nm, and 160 nm. The surface current is recorded at all levels of stress from 1 to 100 V. The current–voltage (IV) curve and physical inspection results for each cell are then reviewed and classified. The results yielded which no electric field induced migration (EFM) defect and breakdown voltage occurred at any of the structures. The cathode’s metal work function has been identified as the factor that influences the PSM reticle ESD threshold voltage. Institute Of Advanced Engineering And Science (IAES) 2022-04 Article PeerReviewed text en http://eprints.utem.edu.my/id/eprint/26201/2/24876-50758-1-PB.PDF Razman, Harriman and Awang Md Isa, Azmi and Suaidi, Mohamad Kadim and Chik, Mohd Azizi (2022) Characterization of electrostatic discharge threshold voltage of phase-shift mask reticle. International Journal of Electrical and Computer Engineering (IJECE), 12 (2). pp. 1265-1273. ISSN 2088-8708 https://ijece.iaescore.com/index.php/IJECE/article/view/24876/15469 10.11591/ijece.v12i2.pp1265-1273
institution Universiti Teknikal Malaysia Melaka
building UTEM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknikal Malaysia Melaka
content_source UTEM Institutional Repository
url_provider http://eprints.utem.edu.my/
language English
description A reticle is a stencil used in lithography process for forming integrated circuit (IC) on silicon substrate. It consists of a thin (100 nm) coating of masking metallic patterned (features) with critical dimension (CD) of nanometers on a thicker quartz substrate. The features can be damaged by electrostatic discharge (ESD) when exposed to the environment electrostatic charge and caused deformed IC and eventually device difunctional. Semiconductor equipment materials industry (SEMI) standard established the allowable electrostatic charge on reticle based on the characterization of ESD threshold voltage on binary reticle. However, there is another type of reticle which is phase-shift mask (PSM), has not been characterized for its ESD threshold voltage. A direct current (DC) voltage is applied directly to the structures with CD of 80 nm, 110 nm, and 160 nm. The surface current is recorded at all levels of stress from 1 to 100 V. The current–voltage (IV) curve and physical inspection results for each cell are then reviewed and classified. The results yielded which no electric field induced migration (EFM) defect and breakdown voltage occurred at any of the structures. The cathode’s metal work function has been identified as the factor that influences the PSM reticle ESD threshold voltage.
format Article
author Razman, Harriman
Awang Md Isa, Azmi
Suaidi, Mohamad Kadim
Chik, Mohd Azizi
spellingShingle Razman, Harriman
Awang Md Isa, Azmi
Suaidi, Mohamad Kadim
Chik, Mohd Azizi
Characterization of electrostatic discharge threshold voltage of phase-shift mask reticle
author_facet Razman, Harriman
Awang Md Isa, Azmi
Suaidi, Mohamad Kadim
Chik, Mohd Azizi
author_sort Razman, Harriman
title Characterization of electrostatic discharge threshold voltage of phase-shift mask reticle
title_short Characterization of electrostatic discharge threshold voltage of phase-shift mask reticle
title_full Characterization of electrostatic discharge threshold voltage of phase-shift mask reticle
title_fullStr Characterization of electrostatic discharge threshold voltage of phase-shift mask reticle
title_full_unstemmed Characterization of electrostatic discharge threshold voltage of phase-shift mask reticle
title_sort characterization of electrostatic discharge threshold voltage of phase-shift mask reticle
publisher Institute Of Advanced Engineering And Science (IAES)
publishDate 2022
url http://eprints.utem.edu.my/id/eprint/26201/2/24876-50758-1-PB.PDF
http://eprints.utem.edu.my/id/eprint/26201/
https://ijece.iaescore.com/index.php/IJECE/article/view/24876/15469
_version_ 1758953849354190848
score 13.211869

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