Cover Image

Impact of KOH etching on nanostructure fabricated by local anodic oxidation method

In this letter, we investigate the impact of potassium hydroxide (KOH) etching procedure on Silicon nanostructure fabricated by Atomic force microscopy on P-type Silicon-on-insulator. An electrochemical process, as the local anodic oxidation followed by two wet chemical etching steps, KOH etch...

Full description

Saved in:
Bibliographic Details
Main Authors: Dehzangi, Arash, Larki, Farhad, Majlis, Burhanuddin Yeop, Naseri, Mahmood Goodarz, Navasery, Manizheh, Abdullah, A. Makarimi, Hutagalung, Sabar D., Abdul Hamid, Norihan, Mohd Noor, Mimiwaty, Vakilian, Mohammadmahdi, Saion, Elias
Format: Article
Language:English
Published: Electrochemical Science Group 2013
Online Access:http://psasir.upm.edu.my/id/eprint/30415/1/Impact%20of%20KOH%20etching%20on%20nanostructure%20fabricated%20by%20local%20anodic%20oxidation%20method.pdf
http://psasir.upm.edu.my/id/eprint/30415/
http://www.electrochemsci.org/list13.htm#issue6
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.upm.eprints.30415
record_format eprints
spelling my.upm.eprints.304152015-10-07T08:45:08Z http://psasir.upm.edu.my/id/eprint/30415/ Impact of KOH etching on nanostructure fabricated by local anodic oxidation method Dehzangi, Arash Larki, Farhad Majlis, Burhanuddin Yeop Naseri, Mahmood Goodarz Navasery, Manizheh Abdullah, A. Makarimi Hutagalung, Sabar D. Abdul Hamid, Norihan Mohd Noor, Mimiwaty Vakilian, Mohammadmahdi Saion, Elias In this letter, we investigate the impact of potassium hydroxide (KOH) etching procedure on Silicon nanostructure fabricated by Atomic force microscopy on P-type Silicon-on-insulator. An electrochemical process, as the local anodic oxidation followed by two wet chemical etching steps, KOH etching for silicon removal and hydrofluoric etching for oxide removal, were implemented to fabricate the silicon nanostructures. The effect of the pure KOH concentrations (10% to 30% wt) on the quality of the surface is studied. The influence of etching immersing time in etching of nanostructure and SOI surface are considered as well. Impact of different KOH concentrations mixed with 10% IPA with reaction temperature on etch rate is investigated. The KOH etching process is elaborately optimized by 30%wt. KOH + 10%vol. IPA in appropriate time and temperature. The angle of the walls in etch pit for extracted nanowire reveals some deviation from the standard anisotropic etching. Electrochemical Science Group 2013 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/30415/1/Impact%20of%20KOH%20etching%20on%20nanostructure%20fabricated%20by%20local%20anodic%20oxidation%20method.pdf Dehzangi, Arash and Larki, Farhad and Majlis, Burhanuddin Yeop and Naseri, Mahmood Goodarz and Navasery, Manizheh and Abdullah, A. Makarimi and Hutagalung, Sabar D. and Abdul Hamid, Norihan and Mohd Noor, Mimiwaty and Vakilian, Mohammadmahdi and Saion, Elias (2013) Impact of KOH etching on nanostructure fabricated by local anodic oxidation method. International Journal of Electrochemical Science, 8 (6). pp. 8084-8096. ISSN 1452-3981 http://www.electrochemsci.org/list13.htm#issue6
institution Universiti Putra Malaysia
building UPM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Putra Malaysia
content_source UPM Institutional Repository
url_provider http://psasir.upm.edu.my/
language English
description In this letter, we investigate the impact of potassium hydroxide (KOH) etching procedure on Silicon nanostructure fabricated by Atomic force microscopy on P-type Silicon-on-insulator. An electrochemical process, as the local anodic oxidation followed by two wet chemical etching steps, KOH etching for silicon removal and hydrofluoric etching for oxide removal, were implemented to fabricate the silicon nanostructures. The effect of the pure KOH concentrations (10% to 30% wt) on the quality of the surface is studied. The influence of etching immersing time in etching of nanostructure and SOI surface are considered as well. Impact of different KOH concentrations mixed with 10% IPA with reaction temperature on etch rate is investigated. The KOH etching process is elaborately optimized by 30%wt. KOH + 10%vol. IPA in appropriate time and temperature. The angle of the walls in etch pit for extracted nanowire reveals some deviation from the standard anisotropic etching.
format Article
author Dehzangi, Arash
Larki, Farhad
Majlis, Burhanuddin Yeop
Naseri, Mahmood Goodarz
Navasery, Manizheh
Abdullah, A. Makarimi
Hutagalung, Sabar D.
Abdul Hamid, Norihan
Mohd Noor, Mimiwaty
Vakilian, Mohammadmahdi
Saion, Elias
spellingShingle Dehzangi, Arash
Larki, Farhad
Majlis, Burhanuddin Yeop
Naseri, Mahmood Goodarz
Navasery, Manizheh
Abdullah, A. Makarimi
Hutagalung, Sabar D.
Abdul Hamid, Norihan
Mohd Noor, Mimiwaty
Vakilian, Mohammadmahdi
Saion, Elias
Impact of KOH etching on nanostructure fabricated by local anodic oxidation method
author_facet Dehzangi, Arash
Larki, Farhad
Majlis, Burhanuddin Yeop
Naseri, Mahmood Goodarz
Navasery, Manizheh
Abdullah, A. Makarimi
Hutagalung, Sabar D.
Abdul Hamid, Norihan
Mohd Noor, Mimiwaty
Vakilian, Mohammadmahdi
Saion, Elias
author_sort Dehzangi, Arash
title Impact of KOH etching on nanostructure fabricated by local anodic oxidation method
title_short Impact of KOH etching on nanostructure fabricated by local anodic oxidation method
title_full Impact of KOH etching on nanostructure fabricated by local anodic oxidation method
title_fullStr Impact of KOH etching on nanostructure fabricated by local anodic oxidation method
title_full_unstemmed Impact of KOH etching on nanostructure fabricated by local anodic oxidation method
title_sort impact of koh etching on nanostructure fabricated by local anodic oxidation method
publisher Electrochemical Science Group
publishDate 2013
url http://psasir.upm.edu.my/id/eprint/30415/1/Impact%20of%20KOH%20etching%20on%20nanostructure%20fabricated%20by%20local%20anodic%20oxidation%20method.pdf
http://psasir.upm.edu.my/id/eprint/30415/
http://www.electrochemsci.org/list13.htm#issue6
_version_ 1643830052162371584
score 13.211869

Similar Items