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Simulation of transport in laterally gated junctionless transistors fabricated by local anodization with an atomic force microscope

In this paper, we have investigated the characteristics and transport features of junctionless lateral gate transistors via measurement and simulations. The transistor is fabricated using an atomic force microscopy (AFM) nanolithography technique on silicon-on-insulator (SOI) wafer. This work develo...

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Bibliographic Details
Main Authors: Larki, Farhad, Dehzangi, Arash, Saion, Elias, Abedini, Alam, Hutagalung, Sabar D., Abdullah, A. Makarimi
Format: Article
Language:English
Published: Wiley-VCH Verlag 2013
Online Access:http://psasir.upm.edu.my/id/eprint/28869/1/Simulation%20of%20transport%20in%20laterally%20gated%20junctionless%20transistors%20fabricated%20by%20local%20anodization%20with%20an%20atomic%20force%20microscope.pdf
http://psasir.upm.edu.my/id/eprint/28869/
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http://psasir.upm.edu.my/id/eprint/28869/1/Simulation%20of%20transport%20in%20laterally%20gated%20junctionless%20transistors%20fabricated%20by%20local%20anodization%20with%20an%20atomic%20force%20microscope.pdf
http://psasir.upm.edu.my/id/eprint/28869/

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