Electrical and microstructures properties of polygate electrode in 0.5 μm CMOS devices
The effect of phosphorus, doped by in-situ and by ion implantation on poly silicon, as a gate electrode of 0.5 μm CMOS was investigated. The result shows that a two-step annealing is required to cure the radiation damage and activate the dopant in reducing the sheet resistance of the ion implanted g...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | |
| Published: |
2017
|
| Online Access: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5337 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|