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Electrical and microstructures properties of polygate electrode in 0.5 μm CMOS devices

The effect of phosphorus, doped by in-situ and by ion implantation on poly silicon, as a gate electrode of 0.5 μm CMOS was investigated. The result shows that a two-step annealing is required to cure the radiation damage and activate the dopant in reducing the sheet resistance of the ion implanted g...

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書誌詳細
主要な著者:	Omar, A., Ahmad, I., Alias, A.J.
フォーマット:
出版事項:	2017
オンライン･アクセス:	http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5337
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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