RF substrate noise characterization for CMOS 0.18μm
In the submicron technologies, RF noise isolation is becoming increasingly important. In this paper, the investigations of the on-chip RF isolation techniques were carried out. The chosen isolation structures were the Deep Nwell (or triple well isolation) and the P+ Guard Ring. The test structures w...
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| Main Authors: | , , |
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| 格式: | Conference Paper |
| 語言: | en_US |
| 出版: |
2017
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