Electrical and microstructures properties of polygate electrode in 0.5 μm CMOS devices
The effect of phosphorus, doped by in-situ and by ion implantation on poly silicon, as a gate electrode of 0.5 μm CMOS was investigated. The result shows that a two-step annealing is required to cure the radiation damage and activate the dopant in reducing the sheet resistance of the ion implanted g...
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| 主要な著者: | , , |
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2017
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| オンライン･アクセス: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5337 |
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