Electrical and microstructures properties of polygate electrode in 0.5 μm CMOS devices
The effect of phosphorus, doped by in-situ and by ion implantation on poly silicon, as a gate electrode of 0.5 μm CMOS was investigated. The result shows that a two-step annealing is required to cure the radiation damage and activate the dopant in reducing the sheet resistance of the ion implanted g...
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my.uniten.dspace-53372017-11-15T02:57:36Z Electrical and microstructures properties of polygate electrode in 0.5 μm CMOS devices Omar, A. Ahmad, I. Alias, A.J. The effect of phosphorus, doped by in-situ and by ion implantation on poly silicon, as a gate electrode of 0.5 μm CMOS was investigated. The result shows that a two-step annealing is required to cure the radiation damage and activate the dopant in reducing the sheet resistance of the ion implanted gate electrode. The introduction of phosphorus from 7×10 15 to 3×l0 l6/cm 3 by ion implantation at 40 keV has reduced the sheet resistance from 100 ohm/ to 25 ohm/ comparable to the gate produced by in-situ phosphorus doping. The microstructures of polysilicon gate electrode were studied using TEM. and found that grains of samples in polysilicon doped by in-situ are larger than other samples. © 2000 IEEE. 2017-11-15T02:57:36Z 2017-11-15T02:57:36Z 2000 http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5337 |
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The effect of phosphorus, doped by in-situ and by ion implantation on poly silicon, as a gate electrode of 0.5 μm CMOS was investigated. The result shows that a two-step annealing is required to cure the radiation damage and activate the dopant in reducing the sheet resistance of the ion implanted gate electrode. The introduction of phosphorus from 7×10 15 to 3×l0 l6/cm 3 by ion implantation at 40 keV has reduced the sheet resistance from 100 ohm/ to 25 ohm/ comparable to the gate produced by in-situ phosphorus doping. The microstructures of polysilicon gate electrode were studied using TEM. and found that grains of samples in polysilicon doped by in-situ are larger than other samples. © 2000 IEEE. |
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| author |
Omar, A. Ahmad, I. Alias, A.J. |
| spellingShingle |
Omar, A. Ahmad, I. Alias, A.J. Electrical and microstructures properties of polygate electrode in 0.5 μm CMOS devices |
| author_facet |
Omar, A. Ahmad, I. Alias, A.J. |
| author_sort |
Omar, A. |
| title |
Electrical and microstructures properties of polygate electrode in 0.5 μm CMOS devices |
| title_short |
Electrical and microstructures properties of polygate electrode in 0.5 μm CMOS devices |
| title_full |
Electrical and microstructures properties of polygate electrode in 0.5 μm CMOS devices |
| title_fullStr |
Electrical and microstructures properties of polygate electrode in 0.5 μm CMOS devices |
| title_full_unstemmed |
Electrical and microstructures properties of polygate electrode in 0.5 μm CMOS devices |
| title_sort |
electrical and microstructures properties of polygate electrode in 0.5 μm cmos devices |
| publishDate |
2017 |
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http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5337 |
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1644493661528915968 |
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13.223943 |