Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics

This work reports the dark current density-voltage (J-V) characteristics and electric field profile of InAs photodiode with 100μm × 1μm cross sectional area at a temperature of 300K. The device structure was simulated using 2D SILVACO software and the model was used to determine all the optimum mate...

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Main Authors:	Roslan, P.S.A., Ker, P.J., Ahmad, I., Pasupuleti, J., Fam, P.Z.
格式:	Conference Proceeding
语言:	en_US
出版:	2017
标签:	添加标签没有标签, 成为第一个标记此记录!

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