InAs electron-avalanche photodiodes: From leaky diodes to extremely low noise avalanche photodiodes
Avalanche gain and excess noise characteristics of InAs APDs showed that high gain can be achieved with excess noise factor F∼1.5 across temperatures ranging from 77 to 298K. © 2011 IEEE.
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Conference Proceeding |
| Language: | en_US |
| Published: |
2017
|
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|