Modeling of 14 nm gate length n-Type MOSFET
Metal-Oxide-Semiconductor Field Effect Transistors MOSFETs (MOSFETs) transistor have been scaled tremendously through Moore's Law since 1974 in order to compact transistors in a single chip. Thus, a proper scaling technique is compulsory to minimize the short channel effect (SCE) problems. In t...
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| Main Authors: | , , , , |
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2017
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| 在線閱讀: | http://dspace.uniten.edu.my/jspui/handle/123456789/5980 |
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