Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics
This work reports the dark current density-voltage (J-V) characteristics and electric field profile of InAs photodiode with 100μm × 1μm cross sectional area at a temperature of 300K. The device structure was simulated using 2D SILVACO software and the model was used to determine all the optimum mate...
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主要な著者: | Roslan, P.S.A., Ker, P.J., Ahmad, I., Pasupuleti, J., Fam, P.Z. |
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フォーマット: | 会議録 |
言語: | en_US |
出版事項: |
2017
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