Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics
This work reports the dark current density-voltage (J-V) characteristics and electric field profile of InAs photodiode with 100μm × 1μm cross sectional area at a temperature of 300K. The device structure was simulated using 2D SILVACO software and the model was used to determine all the optimum mate...
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| Main Authors: | , , , , |
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| Format: | Conference Proceeding |
| Language: | en_US |
| Published: |
2017
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