Statistical Optimization Influence on High Permittivity Gate Spacer in 16nm DG-FinFET Device

In this paper, the effect of high permittivity gate spacer on short channel effects (SCEs) for the 16 nm double-gate finFET is investigated, with the output responses optimized using L9 orthogonal array (OA) Taguchi method. The determination is done through Signal-to-noise ratio to the effectiveness...

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書目詳細資料
Main Authors:	Roslan A.F., Salehuddin F., Zain A.S.M., Kaharudin K.E., Mohamad N.R., Maheran A.H.A., Haroon H., Razak H.A., Idris S.K., Ahmad I.
其他作者:	57203514087
格式:	Article
出版:	UiTM Press 2023
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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