Statistical variability in n-channel SOI FinFET in the presence of random discrete dopant
Among the source of variability, random discrete dopant (RDD) fluctuation is significant in current technology scaling nodes. Number and position of discrete dopants give a crucial impact on device's electrical characteristics. In this paper, a comprehensive full-scale 3D simulation study of na...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2016
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/73076/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-84991010575&doi=10.1109%2fSMELEC.2016.7573634&partnerID=40&md5=170ce12a731382b851aa1abde8112150 |
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