Statistical Optimization Influence on High Permittivity Gate Spacer in 16nm DG-FinFET Device

In this paper, the effect of high permittivity gate spacer on short channel effects (SCEs) for the 16 nm double-gate finFET is investigated, with the output responses optimized using L9 orthogonal array (OA) Taguchi method. The determination is done through Signal-to-noise ratio to the effectiveness...

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書誌詳細
主要な著者:	Roslan A.F., Salehuddin F., Zain A.S.M., Kaharudin K.E., Mohamad N.R., Maheran A.H.A., Haroon H., Razak H.A., Idris S.K., Ahmad I.
その他の著者:	57203514087
フォーマット:	論文
出版事項:	UiTM Press 2023
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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