Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical Modelling
Hafnium oxides; High-k dielectric; Manufacture; Silicides; Taguchi methods; CMOS transistors; HIGH-K metal gates; Modeling and optimization; Process parameters; Process parameters optimizations; Titanium silicide; Tungsten silicide; Wafer fabrications; Reconfigurable hardware
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Format: | Conference Paper |
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EDP Sciences
2023
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