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The analysis of soft error in static random access memory and mitigation by using transmission gate

As the progress of technology continues in accordance to Moore’s law, the density and downsizing of circuitry presents a significant vulnerability to the effects of soft errors. This study proposed a novel method to mitigate soft errors by increasing the robustness of complementary metal oxide semic...

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Main Authors: FARHANA, MOHAMAD ABDUL KADIR, Norhuzaimin, Julai
Format: Article
Language:English
Published: Institute of Advanced Engineering and Science (IAES) 2024
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://ir.unimas.my/id/eprint/46148/1/7664-22391-1-PB.pdf
http://ir.unimas.my/id/eprint/46148/
https://beei.org/index.php/EEI/article/view/7664
https://doi.org/10.11591/eei.v13i6.7664
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spelling my.unimas.ir.461482024-09-26T02:59:47Z http://ir.unimas.my/id/eprint/46148/ The analysis of soft error in static random access memory and mitigation by using transmission gate FARHANA, MOHAMAD ABDUL KADIR Norhuzaimin, Julai TK Electrical engineering. Electronics Nuclear engineering As the progress of technology continues in accordance to Moore’s law, the density and downsizing of circuitry presents a significant vulnerability to the effects of soft errors. This study proposed a novel method to mitigate soft errors by increasing the robustness of complementary metal oxide semiconductor (CMOS) technology against soft errors via the use of transmission gates within the memory nodes of static random access memory (SRAM) which functioned as a low pass filter that disallowed the occurrence of data corruption. The proposed SRAM was tested against parameter variation of supply voltage and temperature. The critical charge was observed to increase with supply voltage increase, with the opposite being true of the increase in temperature. The increase in critical charge of up to 88.63% was achieved with regards to parameter variation for the transmission gate SRAM in comparison to the 6T SRAM. Institute of Advanced Engineering and Science (IAES) 2024 Article PeerReviewed text en http://ir.unimas.my/id/eprint/46148/1/7664-22391-1-PB.pdf FARHANA, MOHAMAD ABDUL KADIR and Norhuzaimin, Julai (2024) The analysis of soft error in static random access memory and mitigation by using transmission gate. Bulletin of Electrical Engineering and Informatics, 13 (6). pp. 3983-3992. ISSN 2302-9285 https://beei.org/index.php/EEI/article/view/7664 https://doi.org/10.11591/eei.v13i6.7664
institution Universiti Malaysia Sarawak
building Centre for Academic Information Services (CAIS)
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Sarawak
content_source UNIMAS Institutional Repository
url_provider http://ir.unimas.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
FARHANA, MOHAMAD ABDUL KADIR
Norhuzaimin, Julai
The analysis of soft error in static random access memory and mitigation by using transmission gate
description As the progress of technology continues in accordance to Moore’s law, the density and downsizing of circuitry presents a significant vulnerability to the effects of soft errors. This study proposed a novel method to mitigate soft errors by increasing the robustness of complementary metal oxide semiconductor (CMOS) technology against soft errors via the use of transmission gates within the memory nodes of static random access memory (SRAM) which functioned as a low pass filter that disallowed the occurrence of data corruption. The proposed SRAM was tested against parameter variation of supply voltage and temperature. The critical charge was observed to increase with supply voltage increase, with the opposite being true of the increase in temperature. The increase in critical charge of up to 88.63% was achieved with regards to parameter variation for the transmission gate SRAM in comparison to the 6T SRAM.
format Article
author FARHANA, MOHAMAD ABDUL KADIR
Norhuzaimin, Julai
author_facet FARHANA, MOHAMAD ABDUL KADIR
Norhuzaimin, Julai
author_sort FARHANA, MOHAMAD ABDUL KADIR
title The analysis of soft error in static random access memory and mitigation by using transmission gate
title_short The analysis of soft error in static random access memory and mitigation by using transmission gate
title_full The analysis of soft error in static random access memory and mitigation by using transmission gate
title_fullStr The analysis of soft error in static random access memory and mitigation by using transmission gate
title_full_unstemmed The analysis of soft error in static random access memory and mitigation by using transmission gate
title_sort analysis of soft error in static random access memory and mitigation by using transmission gate
publisher Institute of Advanced Engineering and Science (IAES)
publishDate 2024
url http://ir.unimas.my/id/eprint/46148/1/7664-22391-1-PB.pdf
http://ir.unimas.my/id/eprint/46148/
https://beei.org/index.php/EEI/article/view/7664
https://doi.org/10.11591/eei.v13i6.7664
_version_ 1811601989164859392
score 13.211869

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