Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium
Purpose – The quality of GeOx–Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. I...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Emerald Publishing Limited
2017
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| Subjects: | |
| Online Access: | http://ir.unimas.my/id/eprint/16683/1/Sahari.pdf http://ir.unimas.my/id/eprint/16683/ http://www.emeraldinsight.com/doi/full/10.1108/MI-12-2015-0099 |
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| Summary: | Purpose – The quality of GeOx–Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due
to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance.
In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al2O3 on the Ge substrate. The purpose of this paper is to
report on growth kinetics and composition of IL between Al2O3 and Ge for HCl- and HF-last Ge surface.
Design/methodology/approach – After wet chemical cleaning with HCl or HF, Al2O3 was grown onto the Ge surface by RF sputtering. Thickness
and composition of IL formed after post-anneal deposition at 400°C in dry oxygen ambience were evaluated as a function of deposition time by
FESEM and characterized by X-ray photoelectron spectroscopy, respectively.
Findings – It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like
composition was formed during RF sputtering for both HF- and HCl-last starting surface.
Originality/value – The novelty of this work is to investigate the starting surface of Ge to IL growth between Al2O3/Ge that will lead to the
improvement in Ge metal insulator field effect transistors (MISFETs) application |
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