Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium
Purpose -The quality of GeOx-Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In t...
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| Main Authors: | , , , , , , , , |
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| 格式: | Article |
| 语言: | English |
| 出版: |
2017
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