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Technical barriers and development of Cu wirebonding in nanoelectronics device packaging

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Main Authors: C., L. Gan, E., K. Ng, B., L. Chan, Uda, Hashim, Prof. Dr., F., C. Classe
Other Authors: clgan pgg@yahoo.com
Format: Article
Language:English
Published: Hindawi Publishing Corporation 2013
Subjects:
Nanoelectronics
Wirebonding
Cu wire
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/26072
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spelling my.unimap-260722013-06-25T06:55:50Z Technical barriers and development of Cu wirebonding in nanoelectronics device packaging C., L. Gan E., K. Ng B., L. Chan Uda, Hashim, Prof. Dr. F., C. Classe clgan pgg@yahoo.com Nanoelectronics Wirebonding Cu wire Link to publisher's homepage at http://www.hindawi.com Bondpad cratering, Cu ball bond interface corrosion, IMD (intermetal dielectric) cracking, and uncontrolled post-wirebond staging are the key technical barriers in Cu wire development. This paper discusses the UHAST (unbiased HAST) reliability performance of Cu wire used in fine-pitch BGA package. In-depth failure analysis has been carried out to identify the failure mechanism under various assembly conditions. Obviously green mold compound, low-halogen substrate, optimized Cu bonding parameters, assembly staging time after wirebonding, and anneal baking after wirebonding are key success factors for Cu wire development in nanoelectronic packaging. Failure mechanisms of Cu ball bonds after UHAST test and CuAl IMC failure characteristics have been proposed and discussed in this paper. 2013-06-25T06:55:50Z 2013-06-25T06:55:50Z 2012 Article Journal of Nanomaterials, vol. 2012, 2012, pages 1-7 1687-4110 http://www.hindawi.com/journals/jnm/2012/173025/ http://hdl.handle.net/123456789/26072 en Hindawi Publishing Corporation
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Nanoelectronics
Wirebonding
Cu wire
spellingShingle Nanoelectronics
Wirebonding
Cu wire
C., L. Gan
E., K. Ng
B., L. Chan
Uda, Hashim, Prof. Dr.
F., C. Classe
Technical barriers and development of Cu wirebonding in nanoelectronics device packaging
description Link to publisher's homepage at http://www.hindawi.com
author2 clgan pgg@yahoo.com
author_facet clgan pgg@yahoo.com
C., L. Gan
E., K. Ng
B., L. Chan
Uda, Hashim, Prof. Dr.
F., C. Classe
format Article
author C., L. Gan
E., K. Ng
B., L. Chan
Uda, Hashim, Prof. Dr.
F., C. Classe
author_sort C., L. Gan
title Technical barriers and development of Cu wirebonding in nanoelectronics device packaging
title_short Technical barriers and development of Cu wirebonding in nanoelectronics device packaging
title_full Technical barriers and development of Cu wirebonding in nanoelectronics device packaging
title_fullStr Technical barriers and development of Cu wirebonding in nanoelectronics device packaging
title_full_unstemmed Technical barriers and development of Cu wirebonding in nanoelectronics device packaging
title_sort technical barriers and development of cu wirebonding in nanoelectronics device packaging
publisher Hindawi Publishing Corporation
publishDate 2013
url http://dspace.unimap.edu.my/xmlui/handle/123456789/26072
_version_ 1643794830362411008
score 13.222552

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