Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions
Nano-electronic applications have benefited enormously from the great advancement in the emerging Nano-technology industry. The tremendous downscaling of the transistors’ dimensions has enabled the placement of over 100 million transistors on a single chip thus reduced cost, increased functionality...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University (Sumy, Ukraine)
2019
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| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/24395/1/Electrical%20%D0%A1haracterization%20ofGe-FinFET%20Transistor.pdf http://umpir.ump.edu.my/id/eprint/24395/ https://doi.org/10.21272/jnep.11(1).01011 https://doi.org/10.21272/jnep.11(1).01011 |
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