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Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions

Nano-electronic applications have benefited enormously from the great advancement in the emerging Nano-technology industry. The tremendous downscaling of the transistors’ dimensions has enabled the placement of over 100 million transistors on a single chip thus reduced cost, increased functionality...

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Main Authors: Mahmood, Ahmed, Jabbar, Waheb A., Hashim, Yasir, Hadi, Manap
Format: Article
Language:English
Published: Sumy State University (Sumy, Ukraine) 2019
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://umpir.ump.edu.my/id/eprint/24395/1/Electrical%20%D0%A1haracterization%20ofGe-FinFET%20Transistor.pdf
http://umpir.ump.edu.my/id/eprint/24395/
https://doi.org/10.21272/jnep.11(1).01011
https://doi.org/10.21272/jnep.11(1).01011
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spelling my.ump.umpir.243952019-03-07T04:49:02Z http://umpir.ump.edu.my/id/eprint/24395/ Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions Mahmood, Ahmed Jabbar, Waheb A. Hashim, Yasir Hadi, Manap TK Electrical engineering. Electronics Nuclear engineering Nano-electronic applications have benefited enormously from the great advancement in the emerging Nano-technology industry. The tremendous downscaling of the transistors’ dimensions has enabled the placement of over 100 million transistors on a single chip thus reduced cost, increased functionality and enhanced performance of integrated circuits (ICs). However, reducing size of the conventional planar transistors would be exceptionally challenging due to leakages electrostatics and other fabrication issues. Fin Field Effect Transistor (FinFET) shows a great potential in scalability and manufacturability as a promising candidate and a successor to conventional planar devices in nanoscale technologies. The structure of FinFET provides superior electrical control over the channel conduction, thus it has attracted widespread interest of researchers in both academia and industry. However, aggressively scaling down of channel dimensions, will degrade the overall performance due to detrimental short channel effects. In this paper, we investigate the impact of downscaling of nano-channel dimensions of Germanium Fin Feld Effect Transistor (Ge-FinFET) on electrical characteristics of the transistor, namely; ION/IOFF ratio, Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to conduct a simulation study to achieve optimal channel dimensions by considering channel length (L), width (W), and oxide thickness (TOX) individually. In addition, the effects of simultaneous consideration of all dimensions by exploiting a scaling factor, K was evaluated. According to the obtained simulation results, the best performance of Ge-FinFET was achieved at a minimal scaling factor, K 0.25 with 5 nm channel length, 2.5 nm width, and 0.625 nm oxide thickness. Sumy State University (Sumy, Ukraine) 2019 Article PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/24395/1/Electrical%20%D0%A1haracterization%20ofGe-FinFET%20Transistor.pdf Mahmood, Ahmed and Jabbar, Waheb A. and Hashim, Yasir and Hadi, Manap (2019) Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions. Journal Of Nano-And Electronic Physics, 11 (1). pp. 1-5. ISSN 2306-4277 https://doi.org/10.21272/jnep.11(1).01011 https://doi.org/10.21272/jnep.11(1).01011
institution Universiti Malaysia Pahang
building UMP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Pahang
content_source UMP Institutional Repository
url_provider http://umpir.ump.edu.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Mahmood, Ahmed
Jabbar, Waheb A.
Hashim, Yasir
Hadi, Manap
Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions
description Nano-electronic applications have benefited enormously from the great advancement in the emerging Nano-technology industry. The tremendous downscaling of the transistors’ dimensions has enabled the placement of over 100 million transistors on a single chip thus reduced cost, increased functionality and enhanced performance of integrated circuits (ICs). However, reducing size of the conventional planar transistors would be exceptionally challenging due to leakages electrostatics and other fabrication issues. Fin Field Effect Transistor (FinFET) shows a great potential in scalability and manufacturability as a promising candidate and a successor to conventional planar devices in nanoscale technologies. The structure of FinFET provides superior electrical control over the channel conduction, thus it has attracted widespread interest of researchers in both academia and industry. However, aggressively scaling down of channel dimensions, will degrade the overall performance due to detrimental short channel effects. In this paper, we investigate the impact of downscaling of nano-channel dimensions of Germanium Fin Feld Effect Transistor (Ge-FinFET) on electrical characteristics of the transistor, namely; ION/IOFF ratio, Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to conduct a simulation study to achieve optimal channel dimensions by considering channel length (L), width (W), and oxide thickness (TOX) individually. In addition, the effects of simultaneous consideration of all dimensions by exploiting a scaling factor, K was evaluated. According to the obtained simulation results, the best performance of Ge-FinFET was achieved at a minimal scaling factor, K 0.25 with 5 nm channel length, 2.5 nm width, and 0.625 nm oxide thickness.
format Article
author Mahmood, Ahmed
Jabbar, Waheb A.
Hashim, Yasir
Hadi, Manap
author_facet Mahmood, Ahmed
Jabbar, Waheb A.
Hashim, Yasir
Hadi, Manap
author_sort Mahmood, Ahmed
title Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions
title_short Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions
title_full Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions
title_fullStr Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions
title_full_unstemmed Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions
title_sort electrical сharacterization of ge-finfet transistor based on nanoscale channel dimensions
publisher Sumy State University (Sumy, Ukraine)
publishDate 2019
url http://umpir.ump.edu.my/id/eprint/24395/1/Electrical%20%D0%A1haracterization%20ofGe-FinFET%20Transistor.pdf
http://umpir.ump.edu.my/id/eprint/24395/
https://doi.org/10.21272/jnep.11(1).01011
https://doi.org/10.21272/jnep.11(1).01011
_version_ 1643669826599649280
score 13.211869

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