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Low-pressure synthesis and characterization of multiphase SiC by HWCVD using CH4/SiH4

Silicon carbide (SiC) thin films were deposited by low-pressure hot wire chemical vapor deposition (HWCVD) technique using SiH4 and CH4 gas precursors with no hydrogen dilution. Spectroscopic and structural properties of the films deposited at various methane flow rate (10-100 sccm) and low silane f...

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Bibliographic Details
Main Authors:	Tehrani, F.S., Badaruddin, M.R., Rahbari, R.G., Muhamad, M.R., Rahman, S.A.
Format:	Article
Published:	2012
Subjects:	QC Physics
Online Access:	http://eprints.um.edu.my/7363/
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