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Low-pressure synthesis and characterization of multiphase SiC by HWCVD using CH4/SiH4

Silicon carbide (SiC) thin films were deposited by low-pressure hot wire chemical vapor deposition (HWCVD) technique using SiH4 and CH4 gas precursors with no hydrogen dilution. Spectroscopic and structural properties of the films deposited at various methane flow rate (10-100 sccm) and low silane f...

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Main Authors: Tehrani, F.S., Badaruddin, M.R., Rahbari, R.G., Muhamad, M.R., Rahman, S.A.
Format: Article
Published: 2012
Subjects:
QC Physics
Online Access:http://eprints.um.edu.my/7363/
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spelling my.um.eprints.73632013-12-10T04:03:07Z http://eprints.um.edu.my/7363/ Low-pressure synthesis and characterization of multiphase SiC by HWCVD using CH4/SiH4 Tehrani, F.S. Badaruddin, M.R. Rahbari, R.G. Muhamad, M.R. Rahman, S.A. QC Physics Silicon carbide (SiC) thin films were deposited by low-pressure hot wire chemical vapor deposition (HWCVD) technique using SiH4 and CH4 gas precursors with no hydrogen dilution. Spectroscopic and structural properties of the films deposited at various methane flow rate (10-100 sccm) and low silane flow rate of 0.5 sccm were investigated. The use of low methane flow rate resulted in a sharp and intense Si-C peak in the Fourier transform infrared (FTIR) absorption spectra. The XRD spectra of the films showed the formation of SiC crystallites at low methane flow rate. The Raman spectroscopy measurements showed the coexistence of a-Si and SiC phases in the films. Increase in methane flow rate increased the carbon incorporation and deposition rate of the SiC films but also promoted the formation of amorphous Si and SiC phases in the films. (C) 2011 Elsevier Ltd. All rights reserved. 2012 Article PeerReviewed Tehrani, F.S. and Badaruddin, M.R. and Rahbari, R.G. and Muhamad, M.R. and Rahman, S.A. (2012) Low-pressure synthesis and characterization of multiphase SiC by HWCVD using CH4/SiH4. Vacuum, 86 (8). pp. 1150-1154. ISSN 0042-207X 10.1016/j.vacuum.2011.10.022
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic QC Physics
spellingShingle QC Physics
Tehrani, F.S.
Badaruddin, M.R.
Rahbari, R.G.
Muhamad, M.R.
Rahman, S.A.
Low-pressure synthesis and characterization of multiphase SiC by HWCVD using CH4/SiH4
description Silicon carbide (SiC) thin films were deposited by low-pressure hot wire chemical vapor deposition (HWCVD) technique using SiH4 and CH4 gas precursors with no hydrogen dilution. Spectroscopic and structural properties of the films deposited at various methane flow rate (10-100 sccm) and low silane flow rate of 0.5 sccm were investigated. The use of low methane flow rate resulted in a sharp and intense Si-C peak in the Fourier transform infrared (FTIR) absorption spectra. The XRD spectra of the films showed the formation of SiC crystallites at low methane flow rate. The Raman spectroscopy measurements showed the coexistence of a-Si and SiC phases in the films. Increase in methane flow rate increased the carbon incorporation and deposition rate of the SiC films but also promoted the formation of amorphous Si and SiC phases in the films. (C) 2011 Elsevier Ltd. All rights reserved.
format Article
author Tehrani, F.S.
Badaruddin, M.R.
Rahbari, R.G.
Muhamad, M.R.
Rahman, S.A.
author_facet Tehrani, F.S.
Badaruddin, M.R.
Rahbari, R.G.
Muhamad, M.R.
Rahman, S.A.
author_sort Tehrani, F.S.
title Low-pressure synthesis and characterization of multiphase SiC by HWCVD using CH4/SiH4
title_short Low-pressure synthesis and characterization of multiphase SiC by HWCVD using CH4/SiH4
title_full Low-pressure synthesis and characterization of multiphase SiC by HWCVD using CH4/SiH4
title_fullStr Low-pressure synthesis and characterization of multiphase SiC by HWCVD using CH4/SiH4
title_full_unstemmed Low-pressure synthesis and characterization of multiphase SiC by HWCVD using CH4/SiH4
title_sort low-pressure synthesis and characterization of multiphase sic by hwcvd using ch4/sih4
publishDate 2012
url http://eprints.um.edu.my/7363/
_version_ 1643688025341820928
score 13.211869

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