Staff View: Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique

Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique

Purpose This study aims to investigate the effect of temperature applied at the initial deposition of Aluminium Nitride (AlN) thin-film on a silicon substrate by high-power impulse magnetron sputtering (HiPIMS) technique. Design/methodology/approach HiPIMS system was used to deposit AlN thin film at...

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Main Authors:	Azman, Zulkifli, Nayan, Nafarizal, Megat Hasnan, Megat Muhammad Ikhsan, Othman, Nurafiqah, Bakri, Anis Suhaili, Abu Bakar, Ahmad Shuhaimi, Mamat, Mohamad Hafiz, Mohd Yusop, Mohd Zamri
Format:	Article
Published:	Emerald 2021
Subjects:	TA Engineering (General). Civil engineering (General)
Online Access:	http://eprints.um.edu.my/34003/
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spelling	my.um.eprints.340032022-06-24T08:28:11Z http://eprints.um.edu.my/34003/ Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique Azman, Zulkifli Nayan, Nafarizal Megat Hasnan, Megat Muhammad Ikhsan Othman, Nurafiqah Bakri, Anis Suhaili Abu Bakar, Ahmad Shuhaimi Mamat, Mohamad Hafiz Mohd Yusop, Mohd Zamri TA Engineering (General). Civil engineering (General) Purpose This study aims to investigate the effect of temperature applied at the initial deposition of Aluminium Nitride (AlN) thin-film on a silicon substrate by high-power impulse magnetron sputtering (HiPIMS) technique. Design/methodology/approach HiPIMS system was used to deposit AlN thin film at a low output power of 200 W. The ramping temperature was introduced to substrate from room temperature to maximum 100 degrees Cat the initial deposition of thin-film, and the result was compared to thin-film sputtered with no additional heat. For the heat assistance AlN deposition, the substrate was let to cool down to room temperature for the remaining deposition time. The thin-films were characterized by X-ray diffraction (XRD) and atomic force microscope (AFM) while the MIS Schottky diode characteristic investigated through current-voltage response by a two-point probe method. Findings The XRD pattern shows significant improvement of the strong peak of the c-axis (002) preferred orientation of the AlN thin-film. The peak was observed narrowed with temperature assisted where FWHM calculated at 0.35 degrees compared to FWHM of AlN thin film deposited at room temperature at around 0.59 degrees. The degree of crystallinity of bulk thin film was improved by 28% with temperature assisted. The AFM images show significant improvement as low surface roughness achieved at around 0.7 nm for temperature assisted sample compares to 3 nm with no heat applied. Originality/value The small amount of heat introduced to the substrate has significantly improved the growth of the c-axis AlN thin film, and this method is favorable in the deposition of the high-quality thin film at the low-temperature process. Emerald 2021-09-02 Article PeerReviewed Azman, Zulkifli and Nayan, Nafarizal and Megat Hasnan, Megat Muhammad Ikhsan and Othman, Nurafiqah and Bakri, Anis Suhaili and Abu Bakar, Ahmad Shuhaimi and Mamat, Mohamad Hafiz and Mohd Yusop, Mohd Zamri (2021) Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique. Microelectronics International, 38 (3, SI). pp. 86-92. ISSN 1356-5362, DOI https://doi.org/10.1108/MI-02-2021-0013 <https://doi.org/10.1108/MI-02-2021-0013>. 10.1108/MI-02-2021-0013
institution	Universiti Malaya
building	UM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Malaya
content_source	UM Research Repository
url_provider	http://eprints.um.edu.my/
topic	TA Engineering (General). Civil engineering (General)
spellingShingle	TA Engineering (General). Civil engineering (General) Azman, Zulkifli Nayan, Nafarizal Megat Hasnan, Megat Muhammad Ikhsan Othman, Nurafiqah Bakri, Anis Suhaili Abu Bakar, Ahmad Shuhaimi Mamat, Mohamad Hafiz Mohd Yusop, Mohd Zamri Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique
description	Purpose This study aims to investigate the effect of temperature applied at the initial deposition of Aluminium Nitride (AlN) thin-film on a silicon substrate by high-power impulse magnetron sputtering (HiPIMS) technique. Design/methodology/approach HiPIMS system was used to deposit AlN thin film at a low output power of 200 W. The ramping temperature was introduced to substrate from room temperature to maximum 100 degrees Cat the initial deposition of thin-film, and the result was compared to thin-film sputtered with no additional heat. For the heat assistance AlN deposition, the substrate was let to cool down to room temperature for the remaining deposition time. The thin-films were characterized by X-ray diffraction (XRD) and atomic force microscope (AFM) while the MIS Schottky diode characteristic investigated through current-voltage response by a two-point probe method. Findings The XRD pattern shows significant improvement of the strong peak of the c-axis (002) preferred orientation of the AlN thin-film. The peak was observed narrowed with temperature assisted where FWHM calculated at 0.35 degrees compared to FWHM of AlN thin film deposited at room temperature at around 0.59 degrees. The degree of crystallinity of bulk thin film was improved by 28% with temperature assisted. The AFM images show significant improvement as low surface roughness achieved at around 0.7 nm for temperature assisted sample compares to 3 nm with no heat applied. Originality/value The small amount of heat introduced to the substrate has significantly improved the growth of the c-axis AlN thin film, and this method is favorable in the deposition of the high-quality thin film at the low-temperature process.
format	Article
author	Azman, Zulkifli Nayan, Nafarizal Megat Hasnan, Megat Muhammad Ikhsan Othman, Nurafiqah Bakri, Anis Suhaili Abu Bakar, Ahmad Shuhaimi Mamat, Mohamad Hafiz Mohd Yusop, Mohd Zamri
author_facet	Azman, Zulkifli Nayan, Nafarizal Megat Hasnan, Megat Muhammad Ikhsan Othman, Nurafiqah Bakri, Anis Suhaili Abu Bakar, Ahmad Shuhaimi Mamat, Mohamad Hafiz Mohd Yusop, Mohd Zamri
author_sort	Azman, Zulkifli
title	Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique
title_short	Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique
title_full	Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique
title_fullStr	Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique
title_full_unstemmed	Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique
title_sort	improvement of c-axis (002) aln crystal plane by temperature assisted hipims technique
publisher	Emerald
publishDate	2021
url	http://eprints.um.edu.my/34003/
_version_	1738510699709071360
score	13.211869

Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique

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