表紙画像

Direct exchange interaction of localized spins associated with unpaired sp electrons in Be-doped low-temperature-grown GaAs layers

Beryllium-doped GaAs layers grown at low temperatures by molecular-beam epitaxy contain localized spins associated with unpaired sp electrons of As Ga + ions. Interactions of these localized spins are investigated by measuring the magnetization with a superconducting quantum interference device and...

保存先:

書誌詳細
主要な著者:	Bae, K. W., Mohamed, Mohd Ambri, Jung, DaeWon, Otsuka, Nobuo
フォーマット:	論文
言語:	English
出版事項:	American Institute of Physics 2011
主題:	QC Physics QD Chemistry TK7885 Computer engineering
オンライン･アクセス:	http://irep.iium.edu.my/29879/1/Direct_exchange_interaction_of_localized_spins_associated_with_unpaired_sp_electrons_in_Be-doped_lT-GaAs.pdf http://irep.iium.edu.my/29879/ http://jap.aip.org/resource/1/japiau/v109/i7/p073918_s1
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

類似資料

Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers
著者:: Mohamed, Mohd Ambri, 等
出版事項: (2011)

Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers
著者:: Mohamed, Mohd Ambri, 等
出版事項: (2013)

Transition of electron transport process in Be-doped low-temperature-grown GaAs layer
著者:: Mohamed, Mohd Ambri, 等
出版事項: (2013)

Non-equilibrium critical point in Be-doped low-temperature-grown GaAs
著者:: Mohamed, Mohd Ambri, 等
出版事項: (2013)

Evolution of GaAs capping layer on in 0.5As/GaAs quantum dots structure
著者:: Aryanto, Didik, 等
出版事項: (2009)

Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate
著者:: Md Taib, Muhamad Ikram, 等
出版事項: (2019)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE
著者:: Roslan, Sharizar, 等
出版事項: (2006)

Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs
著者:: Bablu K. Ghosh, 等
出版事項: (2003)

Initial stages of GaAs/Au eutectic alloy formation for the growth of GaAs nanowires
著者:: Muhammad, Rosnita, 等
出版事項: (2012)

Initial stages of GaAs/Au eutectic alloy formation for the growth of GaAs nanowires
著者:: Rosnita, M, 等
出版事項: (2012)

Surface morphology studies of single and double layer In0.5Ga0.5As/GaAs quantum dots grown by stranski-krastanow growth modes
著者:: Aryanto, Didik, 等
出版事項: (2009)

Evolution of Gaas capping layer on in0.5Ga0.5As/Gaas quantum dots structure
著者:: Aryanto, Didik, 等
出版事項: (2010)

Distribution of ga vacancies in Zn diffused GaAs
著者:: Zahari Mohamed Darus,, 等
出版事項: (1992)

Morphology and structure of self-assembled inxGa1-xAs quantum dots grown on gaAs (100) using MOCVD
著者:: Zulkafli, Othaman, 等
出版事項: (2009)

Fabrication and characterization of stacked self-assembled In0.5Ga0.5As/GaAs quantum dots grown by MOCVD
著者:: Aryanto, Didik, 等
出版事項: (2014)

The electronic band structure of GaBiAs/GaAs layers: influence of strain and band anti-crossing
著者:: Batool, Z., 等
出版事項: (2012)

InAs/GaAs quantum dots grown by metal organic chemical vapor deposition at different temperatures
著者:: Muhammad, Rosnita, 等
出版事項: (2008)

Cycle generative adversarial network for unpaired sketch-to-character translation
著者:: Alsaati, Leena Zeini J.
出版事項: (2019)

Surface morphology and lateral distribution of self-assembled in0.5Ga0.5AS nanostructures grown on gaAs (100) substrate
著者:: Aryanto, Didik, 等
出版事項: (2008)

Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings
著者:: Hodgson, Peter D., 等
出版事項: (2013)

Morphology of gaas nanowires grown by rf sputtering with single buffer layer assisted
著者:: Abd.Khamim Ismail Muhammad F, Nor Fadilah Mohamad Nasir
出版事項: (2018)

Harmonic responses in 2DEG A1GaAs/GaAs hemt devices due to plasma wave interactions
著者:: Hashim, Abdul Manaf, 等
出版事項: (2009)

Thermal stablity of heavily carbon-doped GaAs
著者:: Meng , Suan Uang, 等
出版事項: (2004)

Resonance of bandgap and spin-orbit splitting ingabias/gaas alloys
著者:: Mohmad, A. R., 等
出版事項: (2011)

Improvement of the optical properties of GaN epilayers on Si(111): Impact of GaAs layer thickness on Si and pre‐growth strategy
著者:: Bablu Kumar Ghosh, 等
出版事項: (2003)

Effect of InxGa1-xAs underlying layer and growth mode on the surface morphology of In0.5Ga0.5As/GaAs quantum dots
著者:: Ismail, Abd Khamim
出版事項: (2009)

Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots
著者:: Wahab, Yussof, 等
出版事項: (2006)

Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots
著者:: Wahab, Yussof, 等
出版事項: (2006)

Fabrication of reduced graphene oxide-gated AlGaAs/GaAs heterojunction transistor
著者:: Azmi, S. N. C., 等
出版事項: (2016)

An analysis of the electron trajectory in the vicinity of GaAs quantum dot
著者:: Kasmin, Mohd. Khalid, 等
出版事項: (2014)

An analysis of the electron trajectory in the vicinity of GaAs quantum dot
著者:: Hanafi Ithnin,, 等
出版事項: (2014)

Optoelectronic properties of GaAs and AlAs under temperature effect
著者:: Yarub, Al-Douri, Assoc. Prof. Dr., 等
出版事項: (2014)

Ga segregation impact on Al0.35Ga0.65As/GaAs SQW energy bandgap
著者:: Vahid, R. Yazdanpanah, 等
出版事項: (2019)

Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation
著者:: Ahmad Fauzi, Dhiyauddin, 等
出版事項: (2013)

Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device
著者:: Parimon, Norfarariyanti, 等
出版事項: (2008)

Prediction of n-AlGaAs/GaAs Schottky diode properties for milliwatt range application
著者:: Parimon, Norfarariyanti, 等
出版事項: (2010)

Fabrication and characterization of n-AlGaAs/GaAs schottky diode for rectenna device application
著者:: Parimon, N., 等
出版事項: (2011)

Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings
著者:: Ahmad Kamarudin, Mazliana, 等
出版事項: (2011)

Dual wavelength optical duobinary modulation using GaAs–AlGaAs microring resonator
著者:: Amiri, Iraj Sadegh, 等
出版事項: (2018)

Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.
著者:: Zainal, Norzaini
出版事項: (2016)