Effect of InxGa1-xAs underlying layer and growth mode on the surface morphology of In0.5Ga0.5As/GaAs quantum dots
Single layer of In0.5Ga0.5AsIn0.5Ga0.5As quantum dots (QDs) was grown using self‐assembled Stranski‐Krastanow on a thin InxGa1−xAsInxGa1−xAs underlying layer and on a reference GaAs wafer by metal‐organic chemical vapour deposition (MOCVD). The effect of different indium composition in the underlyin...
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| Format: | Conference or Workshop Item |
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2009
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| Online Access: | http://eprints.utm.my/id/eprint/15101/ http://dx.doi.org/10.1063/1.3469685 |
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