Improvement of the optical properties of GaN epilayers on Si(111): Impact of GaAs layer thickness on Si and pre‐growth strategy
This paper reports the effect of the GaN coating layer on the optical properties of GaN epilayers grown on GaAs/Si(111). Almost crack free GaN epilayers are found to be grown when a thin (∼25 nm) GaN coating layer is inserted on 0.5 and 2 μm GaAs layers at 550 °C. Then nitridation of the GaAs layer...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
John Wiley & Sons Ltd
2003
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| Subjects: | |
| Online Access: | https://eprints.ums.edu.my/id/eprint/20647/1/Improvement%20of%20the%20optical%20properties%20of%20GaN%20epilayers%20on%20Si.pdf https://eprints.ums.edu.my/id/eprint/20647/ https://doi.org/10.1002/pssc.200303541 |
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