Direct exchange interaction of localized spins associated with unpaired sp electrons in Be-doped low-temperature-grown GaAs layers
Beryllium-doped GaAs layers grown at low temperatures by molecular-beam epitaxy contain localized spins associated with unpaired sp electrons of As Ga + ions. Interactions of these localized spins are investigated by measuring the magnetization with a superconducting quantum interference device and...
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| Main Authors: | , , , |
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| 格式: | Article |
| 语言: | English |
| 出版: |
American Institute of Physics
2011
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| 在线阅读: | http://irep.iium.edu.my/29879/1/Direct_exchange_interaction_of_localized_spins_associated_with_unpaired_sp_electrons_in_Be-doped_lT-GaAs.pdf http://irep.iium.edu.my/29879/ http://jap.aip.org/resource/1/japiau/v109/i7/p073918_s1 |
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