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Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices

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Bibliographic Details
Main Authors:	Bature, U.I., Nawi, I.M., Khir, M.H.M., Zahoor, F., Algamili, A.S., Hashwan, S.S.B., Zakariya, M.A.
Format:	Article
Published:	MDPI 2022
Online Access:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85124964825&doi=10.3390%2fma15031205&partnerID=40&md5=f524e38844995f7a200366c87308e9ff http://eprints.utp.edu.my/28663/
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