Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices

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Main Authors: Bature, U.I., Nawi, I.M., Khir, M.H.M., Zahoor, F., Algamili, A.S., Hashwan, S.S.B., Zakariya, M.A.
Format: Article
Published: MDPI 2022
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85124964825&doi=10.3390%2fma15031205&partnerID=40&md5=f524e38844995f7a200366c87308e9ff
http://eprints.utp.edu.my/28663/
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spelling my.utp.eprints.286632022-03-07T10:25:31Z Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices Bature, U.I. Nawi, I.M. Khir, M.H.M. Zahoor, F. Algamili, A.S. Hashwan, S.S.B. Zakariya, M.A. MDPI 2022 Article NonPeerReviewed https://www.scopus.com/inward/record.uri?eid=2-s2.0-85124964825&doi=10.3390%2fma15031205&partnerID=40&md5=f524e38844995f7a200366c87308e9ff Bature, U.I. and Nawi, I.M. and Khir, M.H.M. and Zahoor, F. and Algamili, A.S. and Hashwan, S.S.B. and Zakariya, M.A. (2022) Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices. Materials, 15 (3). http://eprints.utp.edu.my/28663/
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Institutional Repository
url_provider http://eprints.utp.edu.my/
format Article
author Bature, U.I.
Nawi, I.M.
Khir, M.H.M.
Zahoor, F.
Algamili, A.S.
Hashwan, S.S.B.
Zakariya, M.A.
spellingShingle Bature, U.I.
Nawi, I.M.
Khir, M.H.M.
Zahoor, F.
Algamili, A.S.
Hashwan, S.S.B.
Zakariya, M.A.
Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices
author_facet Bature, U.I.
Nawi, I.M.
Khir, M.H.M.
Zahoor, F.
Algamili, A.S.
Hashwan, S.S.B.
Zakariya, M.A.
author_sort Bature, U.I.
title Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices
title_short Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices
title_full Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices
title_fullStr Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices
title_full_unstemmed Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices
title_sort statistical simulation of the switching mechanism in zno-based rram devices
publisher MDPI
publishDate 2022
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85124964825&doi=10.3390%2fma15031205&partnerID=40&md5=f524e38844995f7a200366c87308e9ff
http://eprints.utp.edu.my/28663/
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score 13.211869