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Impact of strain on electrical performance of Silicon Nanowire MOSFET

A 3-Dimensional (3D) strained Silicon Nanowire MOSFET simulation and inversion charge model are presented. The simulation studies are conducted based on electrical parameters of nanowires such as current and threshold voltage using a ATLAS TCAD simulator. The inversion charge model with Germanium fr...

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Main Authors: A. Hamid, Fatimah, Hamzah, Afiq, Mohamad, Azam, Ismail, R., Razali, M. A.
Format: Conference or Workshop Item
Published: 2017
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/97135/
http://dx.doi.org/10.1109/RSM.2017.8069117
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spelling my.utm.971352022-09-15T06:41:53Z http://eprints.utm.my/id/eprint/97135/ Impact of strain on electrical performance of Silicon Nanowire MOSFET A. Hamid, Fatimah Hamzah, Afiq Mohamad, Azam Ismail, R. Razali, M. A. TK Electrical engineering. Electronics Nuclear engineering A 3-Dimensional (3D) strained Silicon Nanowire MOSFET simulation and inversion charge model are presented. The simulation studies are conducted based on electrical parameters of nanowires such as current and threshold voltage using a ATLAS TCAD simulator. The inversion charge model with Germanium fraction is formulated using a unified charge model. These characterization studies are performed to investigate the performance of Silicon Nanowire based on the strain effect. The simulation and modeling works have been compared with numerical simulations. Findings have shown that the strained Silicon Nanowire performs better compared to the unstrained Silicon Nanowire MOSFET, where the on-state current increased, threshold voltage shifted by 0.2 V and inversion charge density improved by 30%. 2017 Conference or Workshop Item PeerReviewed A. Hamid, Fatimah and Hamzah, Afiq and Mohamad, Azam and Ismail, R. and Razali, M. A. (2017) Impact of strain on electrical performance of Silicon Nanowire MOSFET. In: 11th IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017, 23- 25 August 2017, Batu Ferringhi, Penang. http://dx.doi.org/10.1109/RSM.2017.8069117
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
A. Hamid, Fatimah
Hamzah, Afiq
Mohamad, Azam
Ismail, R.
Razali, M. A.
Impact of strain on electrical performance of Silicon Nanowire MOSFET
description A 3-Dimensional (3D) strained Silicon Nanowire MOSFET simulation and inversion charge model are presented. The simulation studies are conducted based on electrical parameters of nanowires such as current and threshold voltage using a ATLAS TCAD simulator. The inversion charge model with Germanium fraction is formulated using a unified charge model. These characterization studies are performed to investigate the performance of Silicon Nanowire based on the strain effect. The simulation and modeling works have been compared with numerical simulations. Findings have shown that the strained Silicon Nanowire performs better compared to the unstrained Silicon Nanowire MOSFET, where the on-state current increased, threshold voltage shifted by 0.2 V and inversion charge density improved by 30%.
format Conference or Workshop Item
author A. Hamid, Fatimah
Hamzah, Afiq
Mohamad, Azam
Ismail, R.
Razali, M. A.
author_facet A. Hamid, Fatimah
Hamzah, Afiq
Mohamad, Azam
Ismail, R.
Razali, M. A.
author_sort A. Hamid, Fatimah
title Impact of strain on electrical performance of Silicon Nanowire MOSFET
title_short Impact of strain on electrical performance of Silicon Nanowire MOSFET
title_full Impact of strain on electrical performance of Silicon Nanowire MOSFET
title_fullStr Impact of strain on electrical performance of Silicon Nanowire MOSFET
title_full_unstemmed Impact of strain on electrical performance of Silicon Nanowire MOSFET
title_sort impact of strain on electrical performance of silicon nanowire mosfet
publishDate 2017
url http://eprints.utm.my/id/eprint/97135/
http://dx.doi.org/10.1109/RSM.2017.8069117
_version_ 1744353716779089920
score 13.211869

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