Impact of strain on electrical performance of Silicon Nanowire MOSFET
A 3-Dimensional (3D) strained Silicon Nanowire MOSFET simulation and inversion charge model are presented. The simulation studies are conducted based on electrical parameters of nanowires such as current and threshold voltage using a ATLAS TCAD simulator. The inversion charge model with Germanium fr...
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| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2017
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/97135/ http://dx.doi.org/10.1109/RSM.2017.8069117 |
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| Summary: | A 3-Dimensional (3D) strained Silicon Nanowire MOSFET simulation and inversion charge model are presented. The simulation studies are conducted based on electrical parameters of nanowires such as current and threshold voltage using a ATLAS TCAD simulator. The inversion charge model with Germanium fraction is formulated using a unified charge model. These characterization studies are performed to investigate the performance of Silicon Nanowire based on the strain effect. The simulation and modeling works have been compared with numerical simulations. Findings have shown that the strained Silicon Nanowire performs better compared to the unstrained Silicon Nanowire MOSFET, where the on-state current increased, threshold voltage shifted by 0.2 V and inversion charge density improved by 30%. |
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