Effect of low-k oxide thickness variation on gate-all-around floating gate with optimized SiO2/La2O3 tunnel barrier

This paper reports the use of a novel lanthanum oxide (La2O3) tunnel barrier layer with low-k materials, silicon dioxide (SiO2) to improve Gate-All-Around Floating Gate (GAA-FG) memory performance performed using 3-Dimensional (3D) simulator of Silvaco ATLAS. We examine the ability of Variable Oxide...

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Main Authors: A. Hamid, Farah, Alias, N. Ezaila, Johari, Zaharah, Hamzah, Afiq, Tan, M. L. Peng, Ismail, Razali
格式: Article
出版: Institute of Physics Publishing 2019
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在線閱讀:http://eprints.utm.my/id/eprint/88655/
http://dx.doi.org/10.1088/2053-1591/ab2869
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